2N4393 TO-18 3L ROHS

2N/PN/SST4391 SERIES SINGLE N-CHANNEL JFET SWITCH FEATURES Replacement for Siliconix 2N/PN/SST4391, 4292, & 4393 rDS(on) ≤ 30Ω LOW ON RESISTANCE tON ≤ 15ns FAST SWITCHING ABSOLUTE MAXIMUM RATINGS 2N SERIES 1 PN SERIES SST SERIES SOT-23 TOP VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature (2N) -65 to 200°C Storage Temperature (PN/SST) -55 to 150°C Junction Operating Temperature (2N) -55 to 200°C Junction Operating Temperature (PN/SST) -55 to 150°C D 1 S 2 3 G Maximum Power Dissipation Continuous Power Dissipation (2N)@Tc=25°C 1800mW Continuous Power Dissipation (PN/SST) 350mW 3 4 Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain or Source (2N/PN) -40V STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC BVGSS Gate to Source Breakdown Voltage VGS(off) Gate to Source Cutoff Voltage TYP 4391 MIN 4392 MAX MIN 4393 MAX -40 2N/PN -4 -10 -2 -5 -0.5 -3 SST -4 -10 -2 -5 -0.5 -3 Gate to Source Forward Voltage VDS(on) Drain to Source On Voltage 0.7 1 1 1 IGSS Gate Leakage Current IG Gate Operating Current V VGS = 0V, ID = 12mA 25 150 5 125 PN 50 165 25 150 5 125 25 mA VDS = 20V, VGS = 0V 5 2N/SST -5 -100 -100 -100 PN -5 -1000 -1000 -1000 -5 IG = 1mA, VDS = 0V VGS = 0V, ID = 3mA 0.4 165 50 VDS = 15V, ID = 10nA VGS = 0V, ID = 6mA 50 Linear Integrated Systems VDS = 20V, ID = 1nA 0.4 2N SST CONDITIONS IG = -1µA, VDS = 0V 0.4 0.3 0.35 Drain to Source 2 Saturation Current UNIT -40 0.25 IDSS MAX 2N/PN/SST VGS(F) -40 MIN pA VGS = -20V, VDS = 0V VDG = 15V, ID = 10mA • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391 STATIC ELECTRICAL CHARACTERISTICS CONT. @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP 4391 MIN 4392 MAX MIN 4393 MAX MIN 5 2N Drain Cutoff Current 5 SST rDS(on) 100 VDS = 20V, VGS = -7V VDS = 20V, VGS = -12V 1000 5 pA 1000 VDS = 20V, VGS = -5V VDS = 20V, VGS = -7V 5 1000 5 100 100 100 30 60 100 Drain to Source On Resistance CONDITIONS VDS = 20V, VGS = -5V 100 5 PN UNIT 100 5 ID(off) MAX VDS = 20V, VGS = -12V VDS = 10V, VGS = -12V Ω VGS = 0V, ID = 1mA DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC TYP gfs Forward Transconductance 6 gos Output Conductance 25 rds(on) Ciss Crss en 4391 MIN Reverse Transfer Capacitance MAX MIN 4393 MAX MIN MAX 30 60 100 2N 12 14 14 14 PN 12 16 16 16 SST 13 2N 3.3 3.5 PN 3.5 5 SST 3.6 2N 3.2 3.5 PN 3.4 5 SST 3.5 2N 2.8 3.5 PN 3.0 5 SST 3.1 Equivalent Input Noise Voltage UNIT mS Drain to Source On Resistance Input Capacitance 4392 CONDITIONS µS VDS = 20V, ID = 1mA f = 1kHz Ω VGS = 0V, ID = 1mA VDS = 20V, VGS = 0V f = 1MHz VDS = 0V, VGS = -5V f = 1MHz pF VDS = 0V, VGS = -7V f = 1MHz VDS = 0V, VGS = -12V f = 1MHz 3 nV/√Hz VDS = 10V, ID = 10mA f = 1kHz SWITCHING ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM. CHARACTERISTIC td(on) Turn On Time tr td(off) Turn Off Time tf TYP 2N/PN 2 SST 2 2N/PN 2 SST 2 2N/PN 6 SST 6 2N/PN 13 SST 13 Linear Integrated Systems 4391 MIN • 4392 MAX MIN 4393 MAX MIN MAX 15 15 15 5 5 5 20 35 50 15 20 30 UNIT ns CONDITIONS VDD = 10V, VGS(H) = 0V 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391 SWITCHING CIRCUIT CHARACTERISTICS SYM. 4391 4392 4393 VGS(L) -12V -7V -5V 1600Ω 3200Ω 6mA 3mA RL ID(on) 800Ω 12mA SWITCHING TEST CIRCUIT VDD RL VGS(H) OUT VGS(L) 1k 51 51 * * SOT-23 0.89 1.03 0.37 0.51 1 1.78 2.05 0.210 0.170 2.80 3.04 3 2 1.20 1.40 2.10 2.64 0.89 1.12 0.085 0.180 0.013 0.100 0.55 DIMENSIONS IN MILLIMETERS *Dimensions in inches NOTES 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% 3. Derate 10mW/°C above 25°C 4. Derate 2.8mW/°C above 25°C Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 Doc 201136 06/18/13 Rev#A5 ECN# LS/PN/SST4391